EPITAXIALLY GROWN BETA-SIC ON SI IN THE CH4-H-2 SYSTEM BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

	EPITAXIALLY GROWN BETA-SIC ON SI IN THE CH4-H-2 SYSTEM BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION
	SUN, Z ; SUN, Y ; WANG, X ; ZHENG, Z
刊名	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
	1995-11-01
卷号	34 页码:L13-L16
关键词	EPITAXY OF THIN FILMS CHEMICAL VAPOR DEPOSITION SILICON SILICON CARBIDE
ISSN号	0921-5107
英文摘要	beta-SiC thin films were deposited on silicon substrates by hot filament chemical vapour deposition from methane diluted with hydrogen. Under deposition conditions with a CH4:H-2 ratio of 0.5%, filament temperature of 2200-2400 degrees C, gas pressure of 10 kPa and distance between filament and substrate of 2-8 mm, if the substrate temperature is between 700 and 1000 degrees C, diamond films were deposited, while if the temperature is between 1000 and 1200 degrees C, only silicon carbide (beta-SiC) films were heteroepitaxially deposited. The morphology and structure of the films were characterized by scanning electron microscopy, X-ray diffraction and Raman spectroscopy, and a model of SiC growth is proposed.
WOS关键词	ASSISTED DIAMOND GROWTH ; LOW-PRESSURE ; THIN-FILMS ; DEFECT STRUCTURES ; NUCLEATION ; SUBSTRATE ; SILICON ; CVD
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE SA LAUSANNE
WOS记录号	WOS:A1995TG51000023
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/46574]
专题	中国科学院近代物理研究所
通讯作者	SUN, Z
作者单位	1.SHANGHAI JIAO TONG UNIV,STATE KEY LAB MET MATRIX COMPOSITE MAT,SHANGHAI 200030,PEOPLES R CHINA 2.CHINESE ACAD SCI,LANZHOU INST CHEM PHYS,DEPT MODERN PHYS,LANZHOU 730000,PEOPLES R CHINA
推荐引用方式 GB/T 7714	SUN, Z,SUN, Y,WANG, X,et al. EPITAXIALLY GROWN BETA-SIC ON SI IN THE CH4-H-2 SYSTEM BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,1995,34:L13-L16.
APA	SUN, Z,SUN, Y,WANG, X,&ZHENG, Z.(1995).EPITAXIALLY GROWN BETA-SIC ON SI IN THE CH4-H-2 SYSTEM BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,34,L13-L16.
MLA	SUN, Z,et al."EPITAXIALLY GROWN BETA-SIC ON SI IN THE CH4-H-2 SYSTEM BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 34(1995):L13-L16.