Fabrication of p-Type ZnO: N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature

doi:10.3390/ma10030236

	Fabrication of p-Type ZnO: N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature
	Jin, Yuping; Zhang, Nuannuan; Zhang, Bin
刊名	MATERIALS
	2017-03-01
卷号	10 页码:10
关键词	p-type ZnO: N films oxygen vacancy (V-O) zinc nitrite (Zn3N2) oxygen plasma
ISSN号	1996-1944
DOI	10.3390/ma10030236
英文摘要	The oxygen vacancy (V-O) is known as the main compensation center in p-type ZnO, which leads to the difficulty of fabricating high-quality p-type ZnO. To reduce the oxygen vacancies, we oxidized Zn3N2 films in oxygen plasma and successfully prepared p-type ZnO: N films at temperatures ranging from room temperature to 300 degrees C. The films were characterized by X-ray diffraction (XRD), non-Rutherford backscattering (non-RBS) spectroscopy, X-ray photoelectron spectroscopy, photoluminescence spectrum, and Hall Effect. The results show that the nitrogen atoms successfully substitute the oxygen sites in the ZnO: N films. The film prepared at room temperature exhibits the highest hole concentration of 6.22 x10(18) cm(-3), and the lowest resistivity of 39.47 Omega.cm. In all ZnO: N films, the V-O defects are reduced significantly. At 200 degrees C, the film holds the lowest value of V-O defects and the strongest UV emission. These results imply that oxygen plasma is very efficient in reducing V-O defects in p-type ZnO: N films, and could greatly reduce the reaction temperature. This method is significant for the development of ZnO-based optoelectronic devices.
资助项目	National Natural Science Foundation of China[10775033] ; National Natural Science Foundation of China[11075038]
WOS关键词	OPTICAL-PROPERTIES ; THIN-FILMS ; ELECTRICAL CHARACTERIZATION ; ROOM-TEMPERATURE ; PHOTOLUMINESCENCE ; TRANSISTORS ; OXIDATION ; NANORODS ; NITROGEN ; OXIDE
WOS研究方向	Materials Science
语种	英语
出版者	MDPI AG
WOS记录号	WOS:000400863500019
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/44823]
专题	中国科学院近代物理研究所
通讯作者	Zhang, Bin
作者单位	Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China
推荐引用方式 GB/T 7714	Jin, Yuping,Zhang, Nuannuan,Zhang, Bin. Fabrication of p-Type ZnO: N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature[J]. MATERIALS,2017,10:10.
APA	Jin, Yuping,Zhang, Nuannuan,&Zhang, Bin.(2017).Fabrication of p-Type ZnO: N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature.MATERIALS,10,10.
MLA	Jin, Yuping,et al."Fabrication of p-Type ZnO: N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature".MATERIALS 10(2017):10.