Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation

doi:10.1016/j.nimb.2016.01.031

	Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation
	Hu, P. P.1,2; Liu, J.1; Zhang, S. X.1,2; Maaz, K.1,3; Zeng, J.1; Guo, H.1,2; Zhai, P. F.1; Duan, J. L.1; Sun, Y. M.1; Hou, M. D.1
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2016-04-01
卷号	372 页码:29-37
关键词	InP GaN Swift heavy ion irradiation Raman shift Defects
ISSN号	0168-583X
DOI	10.1016/j.nimb.2016.01.031
英文摘要	InP crystals and GaN films were irradiated by swift heavy ions Kr-86 and Bi-209 with kinetic energies of 25 and 9.5 MeV per nucleon and ion fluence in the range 5 x 10(10) to 3.6 x 10(12) ions/cm(2). The characteristic optical bands were studied by Raman spectroscopy to reveal the disorder and defects induced in the samples during the irradiation process. The crystallinity of InP and GaN was found to be deteriorated after irradiation by the swift heavy ions and resulted in the amorphous nature of the samples along the ion tracks. The amorphous tracks observed by transmission electron microscopy (TEM) images confirmed the formation of lattice defects. In typical F-2(LO) mode, in case of InP, the spectra shifted towards the lower wavenumbers with a maximum shift of 7.6 cm(-1) induced by 1030 MeV Bi ion irradiation. While in case of GaN, the typical E-2(high) mode shifted towards the higher wavenumbers, with maximum shift of 5.4 cm(-1) induced by 760 MeV Bi ion irradiation at ion fluence of 1 x 10(12) ions/cm(2). The observed Raman shifts reveal the presence of lattice defects and disorder induced in the samples after irradiation by the swift heavy ions. This irradiation also generated lattice stress in the samples, which has been investigated and discussed in detail in this work. (C) 2016 Published by Elsevier B.V.
资助项目	National Natural Science Foundation of China[11179003] ; National Natural Science Foundation of China[11405229] ; National Natural Science Foundation of China[11375241] ; National Natural Science Foundation of China[11275237] ; National Natural Science Foundation of China[11205215]
WOS关键词	INDIUM-PHOSPHIDE ; SURFACE MODIFICATION ; DAMAGE EVOLUTION ; GALLIUM NITRIDE ; CRYSTALLINE INP ; TRACK FORMATION ; QUANTUM DOTS ; IRON IONS ; XE IONS ; GAAS
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000373541600004
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/42177]
专题	中国科学院近代物理研究所
通讯作者	Liu, J.
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.UCAS, Beijing 100049, Peoples R China 3.PINSTECH, Div Phys, Nanomat Res Grp, Islamabad 45650, Pakistan
推荐引用方式 GB/T 7714	Hu, P. P.,Liu, J.,Zhang, S. X.,et al. Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2016,372:29-37.
APA	Hu, P. P..,Liu, J..,Zhang, S. X..,Maaz, K..,Zeng, J..,...&Hou, M. D..(2016).Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,372,29-37.
MLA	Hu, P. P.,et al."Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 372(2016):29-37.