CORC  > 近代物理研究所  > 中国科学院近代物理研究所
Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector
Wembe Tafo, Evariste1,2; Su Hong1; Qian Yi1; Kong Jie1; Wang Tongxi1
刊名NUCLEAR SCIENCE AND TECHNIQUES
2010-10-20
卷号21页码:312-315
关键词Shaping Amplifier CMOS transistor Gaussian CR-RC(n) filter Simulation
ISSN号1001-8042
英文摘要The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip, Si(Li), CdZnTe and CsI detectors, etc., which can be further integrated the whole system and adopted to develop CMOS - based application, specific integrated circuit for Front End Electronics(FEE) of read-out system of nuclear physics, particle physics and astrophysics research, etc. It's why we used only CMOS transistor to develop the entire system. A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC(4) filter, we perform shaping time in the range, 465 ns to 2.76 mu s with a low output resistance and the linearity almost good.
资助项目Third World Academy of Sciences (TWAS) ; National Natural Science Foundation of China[10735060]
WOS研究方向Nuclear Science & Technology ; Physics
语种英语
出版者ELSEVIER SCIENCE BV
WOS记录号WOS:000285989600012
资助机构Third World Academy of Sciences (TWAS) ; National Natural Science Foundation of China
内容类型期刊论文
源URL[http://119.78.100.186/handle/113462/33259]  
专题中国科学院近代物理研究所
通讯作者Su Hong
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
2.Univ Douala, Dept Phys, Douala, Cameroon
推荐引用方式
GB/T 7714
Wembe Tafo, Evariste,Su Hong,Qian Yi,et al. Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector[J]. NUCLEAR SCIENCE AND TECHNIQUES,2010,21:312-315.
APA Wembe Tafo, Evariste,Su Hong,Qian Yi,Kong Jie,&Wang Tongxi.(2010).Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector.NUCLEAR SCIENCE AND TECHNIQUES,21,312-315.
MLA Wembe Tafo, Evariste,et al."Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector".NUCLEAR SCIENCE AND TECHNIQUES 21(2010):312-315.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace