Effects of radio-frequency bias on silicon oxide films deposited by dual electron cyclotron resonance-radio frequency hybrid plasma

	Effects of radio-frequency bias on silicon oxide films deposited by dual electron cyclotron resonance-radio frequency hybrid plasma
	Ke Bo; Wang Lei; Ni Tian-Ling; Ding Fang; Chen Mu-Di; Zhou Hai-Yang; Wen Xiao-Hui; Zhu Xiao-Dong
刊名	ACTA PHYSICA SINICA
	2010-02-01
卷号	59 页码:1338-1343
关键词	electron cyclotron resonance-radio frequency dual hybrid plasma radio-frequency bias silicon oxide films
ISSN号	1000-3290
英文摘要	Silicon oxide films were deposited in electron cyclotron resonance-radio frequency dual hybrid plasmas using a mixture of HMDSO and oxygen as source gases, and optical emission spectroscopy was employed to investigate the gas phase species in the plasma. It is found that both the deposition rate and the chemical bonds of films are significantly affected by the radio frequency bias. The deposition rate is slightly increased when a low direct current self-bias is applied, and is reduced with the increasing self-bias due to strengthened ion bombardment. The ratios of O to Si in the films deposited under the bias frequency of 400 kHz are above 2:1, nearly the same as that under 13.56 MHz. However, the content of carbon under 400 kHz bias is much higher than that under 13.56 MHz. The reason is that the application of the high frequency bias of 13.56 MHz not only strengthens ion bombardment on the material surface, but also induces the variations of the bulk plasmas including the increase of O atom density, while the main effect of the bias of 400 kHz is only to strengthen ion bombardment.
资助项目	National Natural Science Foundation of China[10635010] ; National Basic Research Program of China[2008CB717800]
WOS关键词	CHEMICAL-VAPOR-DEPOSITION
WOS研究方向	Physics
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000274699000097
资助机构	National Natural Science Foundation of China ; National Basic Research Program of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/31823]
专题	中国科学院近代物理研究所
通讯作者	Zhu Xiao-Dong
作者单位	Univ Sci & Technol China, Chinese Acad Sci, Dept Modern Phys, Key Lab Basic Plasma Phys, Hefei 230026, Peoples R China
推荐引用方式 GB/T 7714	Ke Bo,Wang Lei,Ni Tian-Ling,et al. Effects of radio-frequency bias on silicon oxide films deposited by dual electron cyclotron resonance-radio frequency hybrid plasma[J]. ACTA PHYSICA SINICA,2010,59:1338-1343.
APA	Ke Bo.,Wang Lei.,Ni Tian-Ling.,Ding Fang.,Chen Mu-Di.,...&Zhu Xiao-Dong.(2010).Effects of radio-frequency bias on silicon oxide films deposited by dual electron cyclotron resonance-radio frequency hybrid plasma.ACTA PHYSICA SINICA,59,1338-1343.
MLA	Ke Bo,et al."Effects of radio-frequency bias on silicon oxide films deposited by dual electron cyclotron resonance-radio frequency hybrid plasma".ACTA PHYSICA SINICA 59(2010):1338-1343.