Considerable Enhancement of Field Emission of SnO2 Nanowires by Post-Annealing Process in Oxygen at High Temperature

doi:10.1007/s11671-009-9367-x

	Considerable Enhancement of Field Emission of SnO2 Nanowires by Post-Annealing Process in Oxygen at High Temperature
	Wang, J. B.1,2; Li, K.1,2; Zhong, X. L.1,2; Zhou, Y. C.1,2; Fang, X. S.3; Tang, C. C.3; Bando, Y.3
刊名	NANOSCALE RESEARCH LETTERS
	2009-10-01
卷号	4 页码:1135-1140
关键词	SnO2 nanowires Chemical vapor deposition Field emission Annealing
ISSN号	1931-7573
DOI	10.1007/s11671-009-9367-x
英文摘要	The field emission properties of SnO2 nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO2 nanowires, the turn-on and threshold field were 4.03 and 5.4 V/mu m, respectively. Considerable enhancement of field emission of SnO2 nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO2 nanowires were post-annealed at 1,000 A degrees C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/mu m, respectively, and the current density was increased to 6.58 from 0.3 mA/cm(2) at the same applied electric field of 5.0 V/mu m.
资助项目	National Natural Science Foundation of China[50702048] ; National Natural Science Foundation of China[10525211] ; Hunan Provincial Natural Science Foundation of China[09JJ1006] ; Specialized Research Fund for the Doctoral Program of Higher Education[20070530010]
WOS关键词	THIN-FILMS ; NANOTUBES ; HYDROGEN ; ARRAYS
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	SPRINGER
WOS记录号	WOS:000269880900004
资助机构	National Natural Science Foundation of China ; Hunan Provincial Natural Science Foundation of China ; Specialized Research Fund for the Doctoral Program of Higher Education
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/31346]
专题	中国科学院近代物理研究所
通讯作者	Wang, J. B.
作者单位	1.Xiangtan Univ, Inst Modern Phys, Xiangtan 411105, Hunan, Peoples R China 2.Xiangtan Univ, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Hunan, Peoples R China 3.Natl Inst Mat Sci, Nanoscale Mat Ctr, Tsukuba, Ibaraki 3050047, Japan
推荐引用方式 GB/T 7714	Wang, J. B.,Li, K.,Zhong, X. L.,et al. Considerable Enhancement of Field Emission of SnO2 Nanowires by Post-Annealing Process in Oxygen at High Temperature[J]. NANOSCALE RESEARCH LETTERS,2009,4:1135-1140.
APA	Wang, J. B..,Li, K..,Zhong, X. L..,Zhou, Y. C..,Fang, X. S..,...&Bando, Y..(2009).Considerable Enhancement of Field Emission of SnO2 Nanowires by Post-Annealing Process in Oxygen at High Temperature.NANOSCALE RESEARCH LETTERS,4,1135-1140.
MLA	Wang, J. B.,et al."Considerable Enhancement of Field Emission of SnO2 Nanowires by Post-Annealing Process in Oxygen at High Temperature".NANOSCALE RESEARCH LETTERS 4(2009):1135-1140.