| A Modified Single Pulse Method for Transient Thermal Impedance (TTI) Measurement of VDMOSFET Relates Gate Bias to the TTI Results | |
| Tang, Yankun | |
| 刊名 | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
 |
| 2018 | |
| 卷号 | 18页码:383-391 |
| 关键词 | Thermal character MOSFET transient thermal impedance gate bias pulse |
| ISSN号 | 1598-1657 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2832035 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Tang, Yankun. A Modified Single Pulse Method for Transient Thermal Impedance (TTI) Measurement of VDMOSFET Relates Gate Bias to the TTI Results[J]. JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE,2018,18:383-391. |
| APA | Tang, Yankun.(2018).A Modified Single Pulse Method for Transient Thermal Impedance (TTI) Measurement of VDMOSFET Relates Gate Bias to the TTI Results.JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE,18,383-391. |
| MLA | Tang, Yankun."A Modified Single Pulse Method for Transient Thermal Impedance (TTI) Measurement of VDMOSFET Relates Gate Bias to the TTI Results".JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 18(2018):383-391. |
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