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	Impact of TID on latch up induced by pulsed irradiation in CMOS circuits
	Li, Ruibin; He, Chaohui; Chen, Wei; Li, Junlin; Wang, Chenhui; Wang, Guizhen; Qi, Chao; Yang, Shanchao; Jin, Xiaoming; Liu, Yan
刊名	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
	2019
卷号	440页码:95-100
关键词	Base recombination currents Dose rate Latch-ups Oxide trapped charge Pulsed irradiation Shallow trench isolation Surface recombinations Total Ionizing Dose
ISSN号	0168-583X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2828006
专题	西安交通大学
推荐引用方式 GB/T 7714	Li, Ruibin,He, Chaohui,Chen, Wei,et al. Impact of TID on latch up induced by pulsed irradiation in CMOS circuits[J]. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms,2019,440:95-100.
APA	Li, Ruibin.,He, Chaohui.,Chen, Wei.,Li, Junlin.,Wang, Chenhui.,...&Bai, Xiaoyan.(2019).Impact of TID on latch up induced by pulsed irradiation in CMOS circuits.Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms,440,95-100.
MLA	Li, Ruibin,et al."Impact of TID on latch up induced by pulsed irradiation in CMOS circuits".Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 440(2019):95-100.

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