Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing | |
Lu Zhao ; Kun Yang Yujie Ai ; Lian Zhang ; Xiaolong Niu Hongrui Lv ; Yun Zhang | |
刊名 | Journal of Materials Science: Materials in Electronics |
2018 | |
卷号 | 29期号:16页码:13766-13773 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/29264] |
专题 | 半导体研究所_固态光电信息技术实验室 |
推荐引用方式 GB/T 7714 | Lu Zhao ; Kun Yang Yujie Ai ; Lian Zhang ; Xiaolong Niu Hongrui Lv ; Yun Zhang. Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing[J]. Journal of Materials Science: Materials in Electronics,2018,29(16):13766-13773. |
APA | Lu Zhao ; Kun Yang Yujie Ai ; Lian Zhang ; Xiaolong Niu Hongrui Lv ; Yun Zhang.(2018).Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing.Journal of Materials Science: Materials in Electronics,29(16),13766-13773. |
MLA | Lu Zhao ; Kun Yang Yujie Ai ; Lian Zhang ; Xiaolong Niu Hongrui Lv ; Yun Zhang."Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing".Journal of Materials Science: Materials in Electronics 29.16(2018):13766-13773. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论