Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing
Lu Zhao ;   Kun Yang Yujie Ai ;   Lian Zhang ;   Xiaolong Niu Hongrui Lv ;   Yun Zhang
刊名Journal of Materials Science: Materials in Electronics
2018
卷号29期号:16页码:13766-13773
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/29264]  
专题半导体研究所_固态光电信息技术实验室
推荐引用方式
GB/T 7714
Lu Zhao ; Kun Yang Yujie Ai ; Lian Zhang ; Xiaolong Niu Hongrui Lv ; Yun Zhang. Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing[J]. Journal of Materials Science: Materials in Electronics,2018,29(16):13766-13773.
APA Lu Zhao ; Kun Yang Yujie Ai ; Lian Zhang ; Xiaolong Niu Hongrui Lv ; Yun Zhang.(2018).Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing.Journal of Materials Science: Materials in Electronics,29(16),13766-13773.
MLA Lu Zhao ; Kun Yang Yujie Ai ; Lian Zhang ; Xiaolong Niu Hongrui Lv ; Yun Zhang."Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing".Journal of Materials Science: Materials in Electronics 29.16(2018):13766-13773.
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