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	Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects
	Congxin Xia;   Wenqi Xiong;   Juan Du;   Tianxing Wang;   Yuting Peng;   Zhongming Wei;   Jingbo Li;   Yu Jia
刊名	Small
	2018
卷号	14页码:1800365
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29256]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Yuting Peng; Zhongming Wei; Jingbo Li; Yu Jia. Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects[J]. Small,2018,14:1800365.
APA	Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Yuting Peng; Zhongming Wei; Jingbo Li; Yu Jia.(2018).Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects.Small,14,1800365.
MLA	Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Yuting Peng; Zhongming Wei; Jingbo Li; Yu Jia."Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects".Small 14(2018):1800365.

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