Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition | |
X.F. Liu ; G.G. Yan ; B. Liu ; Z.W. Shen ; Z.X. Wen ; J. Chen ; W.S. Zhao ; L. Wang ; F. Zhang ; G.S. Sun ; Y.P. Zeng | |
刊名 | JOURNAL OF CRYSTAL GROWTH |
2018 | |
卷号 | 504页码:7-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/29166] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | X.F. Liu ; G.G. Yan ; B. Liu ; Z.W. Shen ; Z.X. Wen ; J. Chen ; W.S. Zhao ; L. Wang ; F. Zhang ; G.S. Sun ; Y.P. Zeng. Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2018,504:7-12. |
APA | X.F. Liu ; G.G. Yan ; B. Liu ; Z.W. Shen ; Z.X. Wen ; J. Chen ; W.S. Zhao ; L. Wang ; F. Zhang ; G.S. Sun ; Y.P. Zeng.(2018).Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH,504,7-12. |
MLA | X.F. Liu ; G.G. Yan ; B. Liu ; Z.W. Shen ; Z.X. Wen ; J. Chen ; W.S. Zhao ; L. Wang ; F. Zhang ; G.S. Sun ; Y.P. Zeng."Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH 504(2018):7-12. |
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