Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope

	Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope
	Xiantong Zheng ; Wei Huang ; Hongwei Liang ; Ping Wang ; Yu Liu ; Zhaoying Chen ; Ping Liang ; Mo Li ; Jian Zhang ; Yonghai Chen ; Xinqiang Wang
刊名	Journal of Nanoscience and Nanotechnology
	2018
卷号	18 页码:7468–7472
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29090]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Xiantong Zheng ; Wei Huang ; Hongwei Liang ; Ping Wang ; Yu Liu ; Zhaoying Chen ; Ping Liang ; Mo Li ; Jian Zhang ; Yonghai Chen ; Xinqiang Wang. Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope[J]. Journal of Nanoscience and Nanotechnology,2018,18:7468–7472.
APA	Xiantong Zheng ; Wei Huang ; Hongwei Liang ; Ping Wang ; Yu Liu ; Zhaoying Chen ; Ping Liang ; Mo Li ; Jian Zhang ; Yonghai Chen ; Xinqiang Wang.(2018).Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope.Journal of Nanoscience and Nanotechnology,18,7468–7472.
MLA	Xiantong Zheng ; Wei Huang ; Hongwei Liang ; Ping Wang ; Yu Liu ; Zhaoying Chen ; Ping Liang ; Mo Li ; Jian Zhang ; Yonghai Chen ; Xinqiang Wang."Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope".Journal of Nanoscience and Nanotechnology 18(2018):7468–7472.