(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit

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	(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit
	Song SL; Chen NF(陈诺夫); Zhou JP; Li YL; Chai CL; Yang SY; Liu ZK
刊名	Journal of Crystal Growth
	2004
卷号	260 期号:3-4 页码:451-455
关键词	Auger Electron Spectroscopy X-Ray Diffraction Ion-Beam Epitaxy Gadolinium Compounds Metal-Insulator-Transition Epitaxy
ISSN号	0022-0248
通讯作者	Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
中文摘要	(Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 eV at room temperature. There was no new peak found except GaAs substrate peaks (0 0 2) and (0 0 4) by X-ray diffraction. Rocking curves were measured for symmetric (0 0 4) reflections to further yield the lattice mismatch information by employing double-crystal X-ray diffraction. The element distributions vary so much due to the ion dose difference from AES depth profiles. The sample surface morphology indicates oxidizing layer roughness is also relative to the Gd ion dose, which leads to islandlike feature appearing on the high-dose sample. One sample shows ferromagnetic behavior at room temperature. (C) 2003 Elsevier B.V. All rights reserved.
类目[WOS]	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Crystallography ; Materials Science ; Physics
关键词[WOS]	METAL-INSULATOR-TRANSITION ; EPITAXY
收录类别	SCI
语种	英语
WOS记录号	WOS:000187781300027
公开日期	2009-08-03 ; 2010-06-13
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/33831]
专题	力学研究所_力学所知识产出(1956-2008)
推荐引用方式 GB/T 7714	Song SL,Chen NF,Zhou JP,et al. (Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit[J]. Journal of Crystal Growth,2004,260(3-4):451-455.
APA	Song SL.,陈诺夫.,Zhou JP.,Li YL.,Chai CL.,...&Liu ZK.(2004).(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit.Journal of Crystal Growth,260(3-4),451-455.
MLA	Song SL,et al."(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit".Journal of Crystal Growth 260.3-4(2004):451-455.