Irreparable Defects Produced by the Patching of h-BN Frontiers on   Strongly Interacting Re(0001) and Their Electronic Properties

doi:10.1021/jacs.7b00647

CORC > 北京大学 > 工学院

	Irreparable Defects Produced by the Patching of h-BN Frontiers on Strongly Interacting Re(0001) and Their Electronic Properties
	Qi, Yue ; Zhang, Zhepeng ; Deng, Bing ; Zhou, Xiebo ; Li, Qiucheng ; Hong, Min ; Li, Yuanchang ; Liu, Zhongfan ; Zhang, Yanfeng
刊名	JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
	2017
关键词	HEXAGONAL BORON-NITRIDE CHEMICAL-VAPOR-DEPOSITION SCANNING-TUNNELING-MICROSCOPY POINT-DEFECTS GRAPHENE HETEROSTRUCTURES STACKED GRAPHENE EPITAXIAL-GROWTH SINGLE-CRYSTAL MONOLAYER MORPHOLOGY
DOI	10.1021/jacs.7b00647
英文摘要	Clarifying the origin and the electronic properties of defects in materials is crucial since the mechanical, electronic and magnetic properties can be tuned by defects. Herein, we find that, for the growth of h-BN monolayer on Re(0001), the patching frontiers of different domains can be classified into three types, i.e., the patching of B- and N-terminated (BlN-terminated) frontiers, BIB-terminated frontiers and NlN-terminated frontiers, which introduce three types of defects, i.e., the "heart" shaped moire-level defect, the nonbonded and bonded line defects, respectively. These defects were found to bring significant modulations to the electronic properties of h-BN, by introducing band gap reductions and in-gap states, comparing with perfect h-BN on Re(0001) with a band gap of similar to 3.7 eV. The intrinsic binary composition nature of h-BN and the strong h-BN-Re(0001) interaction are proposed to be cooperatively responsible for the formation of these three types of defects. The former one provides different types of h-BN frontiers for domain patching. And the later one induces multinucleation but aligned growth of h-BN domains on Re(0001), thus precluding their subsequent coalescence to some extent. This work offers a deep insight into the categories of defects introduced from the patching growth of two-dimensional layered materials, as well as their electronic property modulation through the defect engineering.; National Key Research and Development Program of China [2016YFA0200103]; Beijing Municipal Science and Technology Commission [Z161100002116020]; Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics [KF201601]; National Natural Science Foundation of China [51290272, 51472008, 51432002, 50121091, 21201012]; National Basic Research Program of China [2013CB932603, 2014CB921002]; SCI(E); ARTICLE; 16; 5849-5856; 139
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/473884]
专题	工学院
推荐引用方式 GB/T 7714	Qi, Yue,Zhang, Zhepeng,Deng, Bing,et al. Irreparable Defects Produced by the Patching of h-BN Frontiers on Strongly Interacting Re(0001) and Their Electronic Properties[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2017.
APA	Qi, Yue.,Zhang, Zhepeng.,Deng, Bing.,Zhou, Xiebo.,Li, Qiucheng.,...&Zhang, Yanfeng.(2017).Irreparable Defects Produced by the Patching of h-BN Frontiers on Strongly Interacting Re(0001) and Their Electronic Properties.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY.
MLA	Qi, Yue,et al."Irreparable Defects Produced by the Patching of h-BN Frontiers on Strongly Interacting Re(0001) and Their Electronic Properties".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2017).