Fabrication of extremely thermal-stable Ga N template on Mo substrate using double bonding and step annealing process

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	Fabrication of extremely thermal-stable Ga N template on Mo substrate using double bonding and step annealing process
	Wang Q(汪青) ; Liu Y(刘扬) ; Sun YJ(孙永健) ; Tong YZ(童玉珍) ; Zhang GY(张国义)
刊名	Journal of Semiconductors
	2016
关键词	gallium nitride Mo substrate medium bonding laser lift off thermal stability homogeneous epitaxial
英文摘要	A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the Ga N epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the thermal-stable bonding medium, the resulting two-inch-diameter Ga N template showed ...; 中国科技核心期刊(ISTIC); 08; 19-22
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/451329]
专题	工学院
推荐引用方式 GB/T 7714	Wang Q,Liu Y,Sun YJ,et al. Fabrication of extremely thermal-stable Ga N template on Mo substrate using double bonding and step annealing process[J]. Journal of Semiconductors,2016.
APA	汪青,刘扬,孙永健,童玉珍,&张国义.(2016).Fabrication of extremely thermal-stable Ga N template on Mo substrate using double bonding and step annealing process.Journal of Semiconductors.
MLA	汪青,et al."Fabrication of extremely thermal-stable Ga N template on Mo substrate using double bonding and step annealing process".Journal of Semiconductors (2016).