Thermal transport in crystalline Si/Ge nano-composites: Atomistic simulations and microscopic models | |
Hao, Feng ; Fang, Daining ; Xu, Zhiping | |
刊名 | 应用物理学快报 |
2012 | |
关键词 | EFFICIENT THERMOELECTRIC-MATERIAL SILICON NANOWIRES CONDUCTIVITY GE/SI SI PERFORMANCE INTERFACE SINGLE STRAIN LAYERS |
DOI | 10.1063/1.3688943 |
英文摘要 | Thermal transport in Si/Ge nano-composites, consisting of crystalline silicon as matrix and aligned germanium nanowires as inclusions, is investigated here through non-equilibrium and equilibrium molecular dynamics (MD) simulations. Our results show increasing of temperature gradient at the interface between silicon and germanium, which is limited in an interfacial phase of few lattices. A thermal boundary phase is included explicitly in our three-phase model, in companion with the modified effective medium theory, to be compared with MD simulation results with various nanowire concentrations. The results suggest that the presence of nanowires leads to a dramatic decrease of kappa for heat transfer across nanowires arising from interfacial phase, while along the interfaces, the reduction of phonon mean free path due to interfacial scattering lowers kappa of silicon matrix and germanium nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3688943]; Physics, Applied; SCI(E); EI; 12; ARTICLE; 9; 100 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/234537] |
专题 | 工学院 |
推荐引用方式 GB/T 7714 | Hao, Feng,Fang, Daining,Xu, Zhiping. Thermal transport in crystalline Si/Ge nano-composites: Atomistic simulations and microscopic models[J]. 应用物理学快报,2012. |
APA | Hao, Feng,Fang, Daining,&Xu, Zhiping.(2012).Thermal transport in crystalline Si/Ge nano-composites: Atomistic simulations and microscopic models.应用物理学快报. |
MLA | Hao, Feng,et al."Thermal transport in crystalline Si/Ge nano-composites: Atomistic simulations and microscopic models".应用物理学快报 (2012). |
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