Piezoelectric Potential Gated Field-Effect Transistor Based on a   Free-Standing ZnO Wire

doi:10.1021/nl901606b

CORC > 北京大学 > 工学院

	Piezoelectric Potential Gated Field-Effect Transistor Based on a Free-Standing ZnO Wire
	Fei, Peng ; Yeh, Ping-Hung ; Zhou, Jun ; Xu, Sheng ; Gao, Yifan ; Song, Jinhui ; Gu, Yudong ; Huang, Yanyi ; Wang, Zhong Lin
刊名	nano letters
	2009
关键词	CARBON NANOTUBE NANOWIRE SENSOR MICROCANTILEVERS
DOI	10.1021/nl901606b
英文摘要	We report an external force triggered field-effect based on a free-standing piezoelectric fine wire (PFW). The device consists of an Ag source electrode and an Au drain electrode at two ends of a ZnO PFW, which were separated by an insulating polydimethylsiloxane (PDMS) thin layer. The working principle of the sensor Is proposed based on the piezoelectric potential gating effect. Once subjected to a mechanical impact, the bent ZnO PFW cantilever creates a piezoelectric potential distribution across It width at Its root and simultaneously produces a local reverse depletion layer with much higher donor concentration than normal, which can dramatically change the current flowing from the source electrode to drain electrode when the device is under a fixed voltage bias, Due to the free-standing structure of the sensor device, it has a prompt response time less than 20 ms and quite high and stable sensitivity of 2%/mu N. The effect from contact resistance has been ruled out.; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 57; ARTICLE; 10; 3435-3439; 9
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/154928]
专题	工学院
推荐引用方式 GB/T 7714	Fei, Peng,Yeh, Ping-Hung,Zhou, Jun,et al. Piezoelectric Potential Gated Field-Effect Transistor Based on a Free-Standing ZnO Wire[J]. nano letters,2009.
APA	Fei, Peng.,Yeh, Ping-Hung.,Zhou, Jun.,Xu, Sheng.,Gao, Yifan.,...&Wang, Zhong Lin.(2009).Piezoelectric Potential Gated Field-Effect Transistor Based on a Free-Standing ZnO Wire.nano letters.
MLA	Fei, Peng,et al."Piezoelectric Potential Gated Field-Effect Transistor Based on a Free-Standing ZnO Wire".nano letters (2009).