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	Optimization of residual stress of SiO2/organic silicon stacked layer prepared using inductively coupled plasma deposition
	Hsu, Chia-Hsun ; Cho, Yun-Shao ; Liu, Ting-Xuan ; Chang, Hsi-Wei ; Lien, Shui-Yang
	2017
关键词	Organic silicon Residual stress Encapsulation Water vapor transmission rate Trimethylsilane LIGHT-EMITTING-DIODES AMORPHOUS-SILICON DEGRADATION MECHANISMS FILMS TRIMETHYLSILANE VAPOR
英文摘要	Silicon dioxide (SiO2) has great potential to be used for thin-film encapsulation for flexible electronic devices, but it easily peels off with a large thickness to fail encapsulation. In this study, organic silicon films with high transmittance and tensile stress are prepared and inserted into SiO2 and polyethylene terephthalate substrate to reduce residual stress. Radiofrequency inductively coupled plasma chemical vapor deposition (ICPCVD) with a gas mixture of argon and trimethylsilane is used for organic silicon film deposition, and the power is varied to investigate its effect on film properties. The plasma emission spectra show that the power of 900 W leads to a balance between the increase in precursor radical intensities and reduction in ion bombardment at increasing power. The resultant film has the highest refractive index value, the largest ratio of Si-C-Si to Si-CHx terminate bonds and the smoothest surface morphology. The residual stress of SiO2 can be tremendously reduced from -360 to -31.6 MPa with organic silicon layer beneath. Furthermore, the eight-pair SiO2/organic silicon stacked encapsulation barrier demonstrates a transmittance of 85.4%, water-vapor transmission rate of 83 x 10(-10) g/cm(2)/day, and a residual stress of -102 MPa. (C) 2017 Elsevier B.V. All rights reserved.; Ministry of Science and Technology of the Republic of China [104-2632-E-212-002-CC3, 104-2622-E-212-005-CC3, 104-2221-E-212-002-MY3]; CPCI-S(ISTP); 293-297; 320
语种	英语
出处	8th International Conference on Technological Advances of Thin Films and Surface Coatings (ThinFilms)
DOI标识	10.1016/j.surfcoat.2016.12.107
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/469703]
专题	软件与微电子学院
推荐引用方式 GB/T 7714	Hsu, Chia-Hsun,Cho, Yun-Shao,Liu, Ting-Xuan,et al. Optimization of residual stress of SiO2/organic silicon stacked layer prepared using inductively coupled plasma deposition. 2017-01-01.

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