Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance   Random Access Memory

doi:10.1109/LED.2016.2532883

CORC > 北京大学 > 软件与微电子学院

	Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
	Tsai, Tsung-Ming ; Chang, Kuan-Chang ; Chang, Ting-Chang ; Zhang, Rui ; Wang, Tong ; Pan, Chih-Hung ; Chen, Kai-Huang ; Chen, Hua-Mao ; Chen, Min-Chen ; Tseng, Yi-Ting ; Chen, Po-Hsun ; Lo, Ikai ; Zheng, Jin-Cheng ; Lou, Jen-Chung ; Sze, Simon M.
刊名	IEEE ELECTRON DEVICE LETTERS
	2016
关键词	ITO RRAM complementary resistance switching oxygen SUPERCRITICAL CO2 FLUID RRAM IMPROVEMENT HYDROGEN DEVICES GATE ELECTRODE FILAMENT STORAGE
DOI	10.1109/LED.2016.2532883
英文摘要	DThis letter investigates the double-ended resistive switching characteristics of indium tin oxide (ITO) resistance random access memory (RRAM). Resistive switching can be achieved around both the active TiN electrode and the inert Pt electrode. In addition, complementary resistance switching (CRS) characteristics can be observed without current compliance during dc voltage sweep operations. Electrical measurement data fitting results indicate that the oxygen-rich ITO near top and bottom electrodes works as a double-ended resistive switching layer. Based on the analysis of the current conduction mechanism, we propose a physical model to interpret the CRS behaviors in ITO RRAM devices.; Ministry of Science and Technology, Taiwan [MOST-103-2112-M-110-011-MY3]; National Science Council Core Facilities Laboratory, Nano-Science and Nano-Technology in Kaohsiung-Pingtung Area; SCI(E); EI; ARTICLE; doubleccc@yahoo.com.tw; tcchang3708@gmail.com; 4; 408-411; 37
语种	中文
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/437449]
专题	软件与微电子学院
推荐引用方式 GB/T 7714	Tsai, Tsung-Ming,Chang, Kuan-Chang,Chang, Ting-Chang,et al. Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory[J]. IEEE ELECTRON DEVICE LETTERS,2016.
APA	Tsai, Tsung-Ming.,Chang, Kuan-Chang.,Chang, Ting-Chang.,Zhang, Rui.,Wang, Tong.,...&Sze, Simon M..(2016).Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory.IEEE ELECTRON DEVICE LETTERS.
MLA	Tsai, Tsung-Ming,et al."Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory".IEEE ELECTRON DEVICE LETTERS (2016).