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	Formation of ultralow-reflectance silicon surface by dry etching
	Zhang, Li ; Yang, Fang ; He, Jun ; Huang, Xian ; Zhang, Dacheng
	2015
关键词	FLUX-CORRECTED TRANSPORT FEMTOSECOND LASER-PULSES BLACK-SILICON PLASMA FABRICATION NANOSTRUCTURES DEPOSITION
英文摘要	In this study, a one-step method of fabricating nano to micro structures was reported. Monte Carlo (MC) simulation and a fluid equation were employed to study the formation and evolution mechanism. To verify the fundamental simulation and hypothetical mechanism, standard surface technology (STS) was used with a phase delay producer to build the etching system. Also, throughout the practical experiment, the relationship between the structure scale and the process parameter was recorded. Lastly, the reflectance was measured to be only 0.9%, proving that this method was very promising for optical application. (C) 2015 The Japan Society of Applied Physics; 973 program [0211CB309502]; SCI(E); CPCI-S(ISTP); 4,SI; 54
语种	英语
出处	International Conference on Solid State Devices and Materials (SSDM 2014)
DOI标识	10.7567/JJAP.54.04DR07
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/493701]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Li,Yang, Fang,He, Jun,et al. Formation of ultralow-reflectance silicon surface by dry etching. 2015-01-01.

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