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	Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide
	Chen, Zhuofa ; Han, Dedong ; Zhao, Nannan ; Wu, Jing ; Cong, Yingying ; Dong, Junchen ; Zhao, Feilong ; Zhang, Shengdong ; Zhang, Xing ; Wang, Yi ; Liu, Lifeng
	2015
关键词	GLASS SUBSTRATE TEMPERATURE
英文摘要	By applying a novel active modulation layer of indium tin oxide/tin zinc oxide (ITO/TZO), we have successfully fabricated high-performance bottom-gate-type dual-active-layer thin-film transistors (TFTs) on a glass substrate at a low temperature by a simple process. The as-fabricated dual-active-layer ITO/TZO TFTs exhibited excellent electrical properties compared with single-active-layer TZO TFTs. We found that the dual-layer ITO/TZO TFT with an optimized stack structure of ITO (5 nm)/TZO (45 nm) as the channel layer exhibits excellent properties, namely, a high saturation mobility of 204cm(2)V(-1)s(-1), a steep subthreshold slope of 219mV/dec, a low threshold voltage of 0.8V, and a high on-off current ratio of 4.3 x 10(7). A physical mechanism for the electrical improvement is also deduced. Owing to its advantages, namely, a low processing temperature, a high electrical performance, a simple process, and a low cost, this novel active modulation layer is highly promising for the manufacture of oxide semiconductor TFT and transparent displays. (C) 2015 The Japan Society of Applied Physics; National Basic Research Program of China (973 Program) [2011CBA00600]; National Natural Science Foundation of China [61275025]; SCI(E); CPCI-S(ISTP); 4,SI; 54
语种	英语
出处	International Conference on Solid State Devices and Materials (SSDM 2014)
DOI标识	10.7567/JJAP.54.04DF03
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/493695]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chen, Zhuofa,Han, Dedong,Zhao, Nannan,et al. Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide. 2015-01-01.

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