Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors | |
WANG RunSheng ; YU Tao ; HUANG Ru ; WANG YangYuan | |
刊名 | Science China(Information Sciences)
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2013 | |
关键词 | MOSFET short-channel effects(SCEs) random variation random dopant fluctuation(RDF) variability electrostatic integrity |
英文摘要 | In this paper,the impacts of device short-channel effects(SCEs) on the random threshold voltage(V TH) variation in nanoscale bulk MOSFETs are investigated.Firstly,the direct relationship between SCEs and random variations are examined.By adopting the electrostatic integrity(EI) as the index for SCEs,clear correlations of device SCEs with random V TH variations are observed,which indicate that the random variations can be reduced by simply improving the SCEs in MOS devices with the same channel doping.In add; 06; 153-159 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/480164] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | WANG RunSheng,YU Tao,HUANG Ru,et al. Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors[J]. Science China(Information Sciences),2013. |
APA | WANG RunSheng,YU Tao,HUANG Ru,&WANG YangYuan.(2013).Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors.Science China(Information Sciences). |
MLA | WANG RunSheng,et al."Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors".Science China(Information Sciences) (2013). |
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