Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors

CORC > 北京大学 > 信息科学技术学院

	Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors
	WANG RunSheng ; YU Tao ; HUANG Ru ; WANG YangYuan
刊名	Science China(Information Sciences)
	2013
关键词	MOSFET short-channel effects(SCEs) random variation random dopant fluctuation(RDF) variability electrostatic integrity
英文摘要	In this paper,the impacts of device short-channel effects(SCEs) on the random threshold voltage(V TH) variation in nanoscale bulk MOSFETs are investigated.Firstly,the direct relationship between SCEs and random variations are examined.By adopting the electrostatic integrity(EI) as the index for SCEs,clear correlations of device SCEs with random V TH variations are observed,which indicate that the random variations can be reduced by simply improving the SCEs in MOS devices with the same channel doping.In add; 06; 153-159
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/480164]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	WANG RunSheng,YU Tao,HUANG Ru,et al. Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors[J]. Science China(Information Sciences),2013.
APA	WANG RunSheng,YU Tao,HUANG Ru,&WANG YangYuan.(2013).Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors.Science China(Information Sciences).
MLA	WANG RunSheng,et al."Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors".Science China(Information Sciences) (2013).