QQ客服 官方微博 反馈留言

	A Low Power Self-Turnoff Program Method for One-Time Programmable Memory; A Low Power Self-Turnoff Program Method for One-Time Programmable Memory
	Ling Shen ; Yongan Zheng ; Fan Yang ; Huailin Liao ; Yangyuan Wang
	2016
关键词	breakdown programmable attached Figure embed transistor drain requirement NMOS acceptable breakdown programmable attached Figure embed transistor drain requirement NMOS acceptable
英文摘要	A novel self-turnoff control circuit for program process of one-time programmable(OTP) cell is proposed. Utilizing the current turnoff technology after the breakdown of OTP cell, it lowers the power consumption efficiently compared with traditional structures without turnoff mechanism. In addition, an additional delay circuit is also attached to the self-turnoff circuit to ensure the complete breakdown of OTP cell. The simulation results show that the average power consumption of proposed circuit decreases to about 3nA in the whole program process.; A novel self-turnoff control circuit for program process of one-time programmable(OTP) cell is proposed. Utilizing the current turnoff technology after the breakdown of OTP cell, it lowers the power consumption efficiently compared with traditional structures without turnoff mechanism. In addition, an additional delay circuit is also attached to the self-turnoff circuit to ensure the complete breakdown of OTP cell. The simulation results show that the average power consumption of proposed circuit decreases; IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479823]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ling Shen,Yongan Zheng,Fan Yang,et al. A Low Power Self-Turnoff Program Method for One-Time Programmable Memory, A Low Power Self-Turnoff Program Method for One-Time Programmable Memory. 2016-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。