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	Leakage Current Analysis Using High Resistivity Silicon Gated Diodes For PIN Detectors Application; Leakage Current Analysis Using High Resistivity Silicon Gated Diodes For PIN Detectors Application
	Hao Wang ; Min Yu ; Baohua Shi ; Yahuan Huang ; Xinyang Zhao ; Yufeng Jin
	2016
关键词	thick junction leakage gated depletion resistivity evident concluded lifetime specially thick junction leakage gated depletion resistivity evident concluded lifetime specially
英文摘要	Ultra-thick and ultra-thin Silicon PIN detectors are specially applied in high particles detections. The corresponding leakage current is investigated. The ultra-thick and ultra-thin gated diodes structures based on high resistivity silicon substrates are fabricated and tested to analyses the reverse leakage current for silicon PIN detectors application. It is concluded that the contribution of the generation current in the main junction depletion region is more significant in the ultra-thick structures, while the contribution of the generation current generated at the silicon-oxide interface is more evident in the ultra-thin structures.; Ultra-thick and ultra-thin Silicon PIN detectors are specially applied in high particles detections. The corresponding leakage current is investigated. The ultra-thick and ultra-thin gated diodes structures based on high resistivity silicon substrates are fabricated and tested to analyses the reverse leakage current for silicon PIN detectors application. It is concluded that the contribution of the generation current in the main junction depletion region is more significant in the ultra-thick structures, w; IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479782]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Hao Wang,Min Yu,Baohua Shi,et al. Leakage Current Analysis Using High Resistivity Silicon Gated Diodes For PIN Detectors Application, Leakage Current Analysis Using High Resistivity Silicon Gated Diodes For PIN Detectors Application. 2016-01-01.

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