QQ客服 官方微博 反馈留言

	Improved Crystallinity of Ultra-thin Amorphous Film By 2D-limited Regrowth: Process and Characterization; Improved Crystallinity of Ultra-thin Amorphous Film By 2D-limited Regrowth: Process and Characterization
	Yuancheng Yang ; Ming Li ; Gong Chen ; Hao Zhang ; Xiaoyan Xu ; Ru Huang
	2016
关键词	Monolithic 3D integration Amorphous silicon Two Dimensional(2D) Recrystallization Capping layer Monolithic 3D integration Amorphous silicon Two Dimensional(2D) Recrystallization Capping layer
英文摘要	The 2-D limited regrowth of α-Si is proposed to achieve larger grain size and smoother surface simultaneously with conventional rapid thermal annealing process. Transmission line method is carried at room temperature and 100 K temperature separately to confirm that the boundary scattering and ionization scattering are possibly suppressed by the capping layer method due to less grain boundary and trapped ionization centers.; The 2-D limited regrowth of α-Si is proposed to achieve larger grain size and smoother surface simultaneously with conventional rapid thermal annealing process. Transmission line method is carried at room temperature and 100 K temperature separately to confirm that the boundary scattering and ionization scattering are possibly suppressed by the capping layer method due to less grain boundary and trapped ionization centers.; IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479776]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yuancheng Yang,Ming Li,Gong Chen,et al. Improved Crystallinity of Ultra-thin Amorphous Film By 2D-limited Regrowth: Process and Characterization, Improved Crystallinity of Ultra-thin Amorphous Film By 2D-limited Regrowth: Process and Characterization. 2016-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。