Testing of 1TnR RRAM array with sneak path technique

CORC > 北京大学 > 信息科学技术学院

	Testing of 1TnR RRAM array with sneak path technique
	Xiaole CUI ; Qiang ZHANG ; Xiaoxin CUI ; Xinan WANG ; Jinfeng KANG ; Xiaoyan LIU
刊名	Science China(Information Sciences)
	2017
关键词	transistor drain editor connected emerging integer worst letter intersection overlapping
英文摘要	<正>Dear editor,RRAM is regarded as one of the most promising candidates among emerging nonvolatile memory technologies[1,2].Recently,the 1Tn R RRAM structure,in which n RRAM cells in each row share a common bottom electrode connected to the drain node of a selector transistor,was proposed to improve the integration density[3,4].The area of the 1T4R RRAM test chip is 30%smaller than that of the conventional 1T1R cell[3].However,the complexity of the conventional; 02; 208-210
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479680]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xiaole CUI,Qiang ZHANG,Xiaoxin CUI,et al. Testing of 1TnR RRAM array with sneak path technique[J]. Science China(Information Sciences),2017.
APA	Xiaole CUI,Qiang ZHANG,Xiaoxin CUI,Xinan WANG,Jinfeng KANG,&Xiaoyan LIU.(2017).Testing of 1TnR RRAM array with sneak path technique.Science China(Information Sciences).
MLA	Xiaole CUI,et al."Testing of 1TnR RRAM array with sneak path technique".Science China(Information Sciences) (2017).