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	Resistive random access memory and its applications in storage and nonvolatile logic
	Dongbin Zhu ; Yi Li ; Wensheng Shen ; Zheng Zhou ; Lifeng Liu ; Xing Zhang
刊名	半导体学报（英文版）
	2017
关键词	RRAM memory nonvolatile logic metal-oxide resistive switching RRAM memory nonvolatile logic metal-oxide resistive switching
DOI	10.1088/1674-4926/38/7/071002
英文摘要	The resistive random access memory (RRAM) device has been widely studied due to its excellent memory characteristics and great application potential in different fields.In this paper,resistive switching materials,switching mechanism,and memory characteristics of RRAM are discussed.Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed.Technological trends are also discussed.; The resistive random access memory (RRAM) device has been widely studied due to its excellent memory characteristics and great application potential in different fields.In this paper,resistive switching materials,switching mechanism,and memory characteristics of RRAM are discussed.Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed.Technological trends are also discussed.; Project supported in part by the National Natural Science Foundation of China; the National Science and Technology Major Project of China; 7; 18-30; 38
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479335]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Dongbin Zhu,Yi Li,Wensheng Shen,et al. Resistive random access memory and its applications in storage and nonvolatile logic[J]. 半导体学报（英文版）,2017.
APA	Dongbin Zhu,Yi Li,Wensheng Shen,Zheng Zhou,Lifeng Liu,&Xing Zhang.(2017).Resistive random access memory and its applications in storage and nonvolatile logic.半导体学报（英文版）.
MLA	Dongbin Zhu,et al."Resistive random access memory and its applications in storage and nonvolatile logic".半导体学报（英文版） (2017).

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