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	Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress
	Zhang Lizhong ; Wang Yuan ; He Yandong
刊名	Chinese Physics. B
	2016
关键词	electrostatic discharge (ESD) diode-triggered silicon controlled rectifier (DTSCR) transmissionline-pulsing (TLP) mathematical modeling
英文摘要	The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal–oxide–semiconductor (CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.; Project supported by the Beijing Municipal Natural Science Foundation, China,the National Science and Technology Major Project of China; 中国科技核心期刊(ISTIC); 中国科学引文数据库(CSCD); 12; 128501-1-128501-7; 25
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/478205]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang Lizhong,Wang Yuan,He Yandong. Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress[J]. Chinese Physics. B,2016.
APA	Zhang Lizhong,Wang Yuan,&He Yandong.(2016).Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress.Chinese Physics. B.
MLA	Zhang Lizhong,et al."Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress".Chinese Physics. B (2016).

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