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	Insight into PBTI in InGaAs Nanowire FETs with Al2O3 and LaAlO3 Gate Dielectrics
	Li, Y. ; Di, S. Y. ; Jiang, H. ; Huang, P. ; Wang, Y. J. ; Lun, Z. Y. ; Shen, L. ; Yin, L. X. ; Zhang, X. ; Du, G. ; Liu, X. Y.
	2016
英文摘要	The traps induced degradation of the Al2O3 and LaAlO3 based InGaAs nanowire FETs are investigated by 3D Kinetic Monte-Carlo (KMC) method considering trap coupling and trap generation. The measurement time constants of the defect in Al2O3 and positive bias temperature instability (PBTI) can be well interpreted by consideration with metastable state. The power law of threshold shift can be greatly affected by the stress. Different from traps in Al2O3, oxygen vacancies and interstitial Aluminum ions in LaAlO3 have important roles in PBTI. Simulated results indicate that Al2O3 have better PBTI and recovery than that of LaAlO3.; NSFC [61421005]; China Postdoctoral Science Foundation [2016M591012]; CPCI-S(ISTP)
语种	英语
出处	62nd Annual IEEE International Electron Devices Meeting (IEDM)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/470259]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Y.,Di, S. Y.,Jiang, H.,et al. Insight into PBTI in InGaAs Nanowire FETs with Al2O3 and LaAlO3 Gate Dielectrics. 2016-01-01.

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