沟道长度对碳纳米管薄膜晶体管阈值电压的调控作用

doi:10.13922/j.cnki.cjovst.2017.08.13

CORC > 北京大学 > 信息科学技术学院

	沟道长度对碳纳米管薄膜晶体管阈值电压的调控作用; Tuning Threshold Voltage of Carbon Nanotube Thin Film Transistors by Channel Length Engineering
	董国栋 ; 夏继业 ; 孟虎 ; 田博元 ; 黄奇 ; 赵杰 ; 毛德丰 ; 刘晓惠 ; 方家 ; 梁学磊
刊名	真空科学与技术学报
	2017
关键词	碳纳米管薄膜晶体管阈值电压沟道长度 Carbon nanotube Thin film transistor Threshold voltage Channel length
DOI	10.13922/j.cnki.cjovst.2017.08.13
英文摘要	根据碳纳米管薄膜晶体管特有的渗流输运机制,通过改变器件的沟道长度实现了对器件阈值电压的调控.与通常的晶体管阈值电压调控方法相比,该方法具有工艺简单且阈值电压调控范围大的优势.这种阈值调控方法不仅是对常规晶体管阈值调控方法的有益补充,同时也对碳纳米管薄膜晶体管的实际应用进程具有重要的促进作用.; The prototyped carbon nanotube thinfilm transistors (CNT-TFTs) were fabricated with its channel made of CNT network film,deposited on Si substrate and consisting of randomly oriented single walled semiconducting CNTs.Carriers transport in CNT-TFT is well described by the stick percolation theory.The experimental results demonstrate that the threshold voltage of CNT-TFTs can be tuned simply by changing the channel length of CNT-TFTs on the basis of the stick percolation theory.The newlydeveloped technique is very simple and the threshold voltage can be tuned in a fairly wide range.We suggest that the novel threshold tuning method may be a complementation to the conventional technique,which is also important for commercialization of CNT-TFTs.; 8; 821-825; 37
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/464281]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	董国栋,夏继业,孟虎,等. 沟道长度对碳纳米管薄膜晶体管阈值电压的调控作用, Tuning Threshold Voltage of Carbon Nanotube Thin Film Transistors by Channel Length Engineering[J]. 真空科学与技术学报,2017.
APA	董国栋.,夏继业.,孟虎.,田博元.,黄奇.,...&梁学磊.(2017).沟道长度对碳纳米管薄膜晶体管阈值电压的调控作用.真空科学与技术学报.
MLA	董国栋,et al."沟道长度对碳纳米管薄膜晶体管阈值电压的调控作用".真空科学与技术学报 (2017).