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Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
Cong, Yingying ; Han, Dedong ; Dong, Junchen ; Zhang, Shengdong ; Zhang, Xing ; Wang, Yi
刊名SCIENTIFIC REPORTS
2017
DOI10.1038/s41598-017-01691-7
英文摘要In this work, fully transparent high performance double-channel indium-tin-oxide/Al-Sn-Zn-O thin-film transistors (ITO/ATZO TFTs) are successfully fabricated on glass by radio frequency (RF) magnetron sputtering. The ITO layer acts as the bottom channel layer to increase the channel carrier concentration. The top ATZO channel layer, which is deposited via high oxygen partial pressure in the sputtering process, is useful to control the minimum off-state current. After annealing, the ITO/ATZO TFT demonstrates outstanding electrical performances, including a high ON/OFF current ratio (I-on/I-off) of 3.5 x 10(8), a steep threshold swing (SS) of 142.2 mV/decade, a superior saturation mobility (mu(sat)) of 246.0 cm(2)/Vs, and a threshold voltage V-T of 0.5 V. The operation mechanisms for double-channel structures are also clarified.; National Basic Research Program of China (973 program) [2013CBA01604]; National Natural Science Foundation of China [61275025]; SCI(E); ARTICLE; 7
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/462367]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Cong, Yingying,Han, Dedong,Dong, Junchen,et al. Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate[J]. SCIENTIFIC REPORTS,2017.
APA Cong, Yingying,Han, Dedong,Dong, Junchen,Zhang, Shengdong,Zhang, Xing,&Wang, Yi.(2017).Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate.SCIENTIFIC REPORTS.
MLA Cong, Yingying,et al."Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate".SCIENTIFIC REPORTS (2017).
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