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	A CMOS-MEMS gyroscope interface circuit design with high gain and low temperature dependence
	Sun, Hongzhi ; Jia, Kemiao ; Liu, Xuesong ; Yan, Guizhen ; Hsu, Yu-Wen ; Fox, Robert M. ; Xie, Huikai
	2011
英文摘要	This paper describes an interface circuit design for monolithic CMOS-MEMS gyroscopes, based on a novel differential difference amplifier (DDA) with high gain, low temperature and process dependence, low noise, and low power consumption. The DDA achieves a 4 fF equivalent transcapacitance with a 0.01%/?? C temperature variation. The DDA-based interface circuit has been integrated with a z-axis gyroscope on a foundry CMOS chip. A 4.5 zF/ ??Hz input-referred noise is achieved at 2 kHz, with a total power consumption of 4.25 mW. The gyroscope is fabricated with a post-CMOS bulk micromachining process and the device achieves a sensitivity of 1.2 mV/??/s and a noise floor 0.05??/s/ ??Hz. ? 2006 IEEE.; EI; 11; 2740-2748; 11
语种	英语
DOI标识	10.1109/JSEN.2011.2158819
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/461736]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Sun, Hongzhi,Jia, Kemiao,Liu, Xuesong,et al. A CMOS-MEMS gyroscope interface circuit design with high gain and low temperature dependence. 2011-01-01.

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