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	Frequency-independent asymmetric double-�� equivalent circuit for on-chip spiral inductors: Physics-based modeling and parameter extraction
	Huang, Fengyi ; Lu, Jingxue ; Jiang, Nan ; Zhang, Xiaowen ; Wu, Wengang ; Wang, Yangyuan
	2006
英文摘要	We present a frequency-independent compact model for silicon on-chip spiral inductors with an asymmetric double-?? equivalent circuit incorporating high-order parasitics such as skin effect and proximity effect. A set of partition factors for parameter ratios between the input and output segments has been introduced and derived from physical analysis to characterize the non-symmetrical feature of the inductor. A novel approach to extracting the model parameters is also developed based on measured S-parameters. As demonstrated for a series of inductors with different geometries fabricated by 0.18-??m CMOS process, the partition factors derived from the physical model are consistent with the extracted parameters, and the model can simulate precisely the inductor characteristics including the asymmetric admittances over a wide frequency rang beyond the self-resonant frequency without fitting parameters. ? 2006 IEEE.; EI; 10; 2272-2282; 41
语种	英语
DOI标识	10.1109/JSSC.2006.881574
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/461682]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, Fengyi,Lu, Jingxue,Jiang, Nan,et al. Frequency-independent asymmetric double-�� equivalent circuit for on-chip spiral inductors: Physics-based modeling and parameter extraction. 2006-01-01.

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