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Novel Applications of Pulse Laser Annealing in Micro Structures by Boundary Control
Tang, Wei ; Chen, Zhe ; He, Siming ; Zhang, Haixia
刊名Procedia Chemistry
2009
DOI10.1016/j.proche.2009.07.196
英文摘要XeCl pulse excimer laser with a wavelength of 248 nm and pulse duration of 38 ns, was utilized to anneal the silicon carbide material deposited by PECVD around the temperature of 300??C. The energy distribution of the laser was uniformed through a mask, and energy density of it varied from 110 mJ/cm2 to 270.6 mJ/cm2. Then amorphous silicon carbide material was annealed, turning to be low-stress and Young Modula improved. At last, the influence of the laser annealing on the device was investigated. The Results revealed that annealing effects turned to be different with the different structures or different transition layers, which were called self-selectivity. In addition the resonance frequency of the resonator would be improved with proper energy density. ? 2009.; EI; 1; 786-791; 1
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/460919]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Tang, Wei,Chen, Zhe,He, Siming,et al. Novel Applications of Pulse Laser Annealing in Micro Structures by Boundary Control[J]. Procedia Chemistry,2009.
APA Tang, Wei,Chen, Zhe,He, Siming,&Zhang, Haixia.(2009).Novel Applications of Pulse Laser Annealing in Micro Structures by Boundary Control.Procedia Chemistry.
MLA Tang, Wei,et al."Novel Applications of Pulse Laser Annealing in Micro Structures by Boundary Control".Procedia Chemistry (2009).
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