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	Process Development of a New TGV Interposer for Wafer Level Package of Inertial MEMS Device
	Ma, Shenglin ; Ren, Kuili ; Xia, Yanming ; Yan, Jun ; Luo, Rongfeng ; Cai, Han ; Jin, Yufeng ; Ma, Mingjun ; Jin, Zhonghe ; Chen, Jing
	2016
关键词	TGV interposer Al RDL Wafer level packaging Inertial devices
英文摘要	In this paper, a TGV interposer based wafer level packaging for inertial MEMS devices is presented. For the TGV interposer, there is a redistribution layer of Al wiring on each side, which are electrically connected with Al metalized TGV. Being as a capping wafer, it's bonded to a MEMS accelerometer wafer based on bulk silicon process with a patterned benzocyclobutene(BCB) layer to achieve wafer level package. To verify the process, TGV interposer is fabricated and experiment results prove that Al TGV interconnection is electrically conductive. TGV interposer capped MEMS accelerometer is demonstrated and the tested shear bonding strength is about 69.84N with two concentric rectangular rings made of BCB adhesives, where the inner ring is about 6300 mu m x 5000 mu m with a width of 200 mu m and the outer ring is about 680 mu m x 5500 mu m with a width of 150 mu m.; CPCI-S(ISTP); mashenglin@xmu.edu.cn; yfjin@pku.edu.cn; jinzh@zju.edu.cn; j.chen@pku.edu.cn; 983-987
语种	英语
出处	17th International Conference on Electronic Packaging Technology (ICEPT)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/459915]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ma, Shenglin,Ren, Kuili,Xia, Yanming,et al. Process Development of a New TGV Interposer for Wafer Level Package of Inertial MEMS Device. 2016-01-01.

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