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	Recovery Characteristics of NBTI of pMOSFETs with Oxynitride Dielectrics Under Drain Bias; Recovery Characteristics of NBTI of pMOSFETs with Oxynitride Dielectrics Under Drain Bias
	Jiaqi Yang ; Junyan Pan ; Lihua Huang ; Xiaoyan Liu ; Ruqi Han
	2008
关键词	drain donor suppressed beginning instability explain biased modem details 汀石
英文摘要	In this paper,the recovery characteristics of negative bias temperature instability(NBTI) of pMOSFETs under drain bias were studied.It is observed that,the drain bias not only worsens the NBTI degradation in high |V_(ds)| region but also suppresses the recovery ratio of NBTI.The time evolutions o...; In this paper,the recovery characteristics of negative bias temperature instability(NBTI) of pMOSFETs under drain bias were studied.It is observed that,the drain bias not only worsens the NBTI degradation in high |V_(ds)| region but also suppresses the recovery ratio of NBTI.The time evolutions o...; IEEE Beijing Section、Chinese Institute of Electronics (CIE); 4
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/450969]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Jiaqi Yang,Junyan Pan,Lihua Huang,et al. Recovery Characteristics of NBTI of pMOSFETs with Oxynitride Dielectrics Under Drain Bias, Recovery Characteristics of NBTI of pMOSFETs with Oxynitride Dielectrics Under Drain Bias. 2008-01-01.

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