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	The Effect of Cobalt Salicide on SOI CMOS Radiation Characteristics; The Effect of Cobalt Salicide on SOI CMOS Radiation Characteristics
	Xing Zhang ; Ru Huang ; Yangyuan Wang
	1998
关键词	oscillator drain leakage junction irradiation hardened hardness circuits PMOS NMOS oscillator drain leakage junction irradiation hardened hardness circuits PMOS NMOS
英文摘要	In this paper we present the total dose radiation characterization of CMOS/SIMOX devices with CoSi_2 salicide. Various SIMOX devices,such as with or without CoSi_2,are applied during irradiation in order to define the better radiation hardened process for SOI MOSFET and ring oscillator.As the exp...; In this paper we present the total dose radiation characterization of CMOS/SIMOX devices with CoSi_2 salicide. Various SIMOX devices,such as with or without CoSi_2,are applied during irradiation in order to define the better radiation hardened process for SOI MOSFET and ring oscillator.As the exp...; Chinese Institute of Electronics; 4
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/450524]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xing Zhang,Ru Huang,Yangyuan Wang. The Effect of Cobalt Salicide on SOI CMOS Radiation Characteristics, The Effect of Cobalt Salicide on SOI CMOS Radiation Characteristics. 1998-01-01.

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