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	Invetigation of Reconfigurable Silicon Nanowire Schottky Barrier Transistors-Based Logic Gate Circuits and SRAM Cell
	Wang, Juncheng ; Du, Gang ; Liu, Xiaoyan
	2015
英文摘要	Reconfigurable Silicon nanowire Schottky Barrier transistors (RFETs) with configurability to be programmed as n/p-type polarity are promising for future integrated circuits. In this work, the tunable polarity characteristics of RFETs are investigated. TCAD simulations have been performed for RFETs-based INV, NOR, NAND logic gates and SRAM cell. 4-terminal RFETs presented show the potential of programmable circuits and high density integration.; CPCI-S(ISTP); gangdu@pku.edu.cn; xyliu@ime.pku.edu.cn
语种	英语
出处	Silicon Nanoelectronics Workshop
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/450345]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Juncheng,Du, Gang,Liu, Xiaoyan. Invetigation of Reconfigurable Silicon Nanowire Schottky Barrier Transistors-Based Logic Gate Circuits and SRAM Cell. 2015-01-01.

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