QQ客服 官方微博 反馈留言

	N+/P Shallow Junction with High Dopant Activation and Low Contact Resistivity Fabricated by Solid Phase Epitaxy Method for Ge Technology
	Liu, Pengqiang ; Li, Ming ; An, Xia ; Lin, Meng ; Zhao, Yang ; Zhang, Bingxin ; Xia, Xuyuan ; Huang, Ru
	2015
英文摘要	In this paper, solid phase epitaxy (SPE) process is proposed to improve phosphorous activation and hence reduce the contact resistivity of n(+)/p junction for Ge n-MOS technology. Over 1x10(20) cm(-3) electrical concentration and about 1.75x10(-6) ohm.cm(2) contact resistivity have been achieved at P+ implantation of 10keV and 5x10(14)cm(-2) and annealing condition of 600 degrees C, 10seconds. The fabricated N+/P diode shows 2 times higher forward current and well controlled leakage.; CPCI-S(ISTP); liming.ime@pku.edu.cn; anxia@ime.pku.edu.cn; ruhuang@pku.edu.cn
语种	英语
出处	Silicon Nanoelectronics Workshop
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/450343]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Pengqiang,Li, Ming,An, Xia,et al. N+/P Shallow Junction with High Dopant Activation and Low Contact Resistivity Fabricated by Solid Phase Epitaxy Method for Ge Technology. 2015-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。