An electronic synapse based on tantalum oxide material | |
Yang, Xue ; Cai, Yimao ; Zhang, Zhenxing ; Yu, Muxi ; Huang, Ru | |
2015 | |
英文摘要 | An electronic synaptic device with weight modulation and learning function is experimentally demonstrated based on a memristor with Ti/Ta2O5/TaOx/Pt structure, which shows good gradual resistance tuning characteristics. The device exhibits various synaptic functions including potentiation, depression, short/long term plasticity (STP/LTP) and Spike-Time-Dependent-Plasticity (STDP) under both DC sweep and pulse operations. The effects of modification pulse conditions such as pulse amplitude, width and interval on synaptic weight tuning was experimentally investigated. Moreover, the learning behavior similar to memory and consolidation in human brains is obtained in our device, indicating it is a promising candidate device for neural network implementation. ? 2015 IEEE.; EI |
语种 | 英语 |
出处 | 15th Non-Volatile Memory Technology Symposium, NVMTS 2015 |
DOI标识 | 10.1109/NVMTS.2015.7457428 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/449532] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Yang, Xue,Cai, Yimao,Zhang, Zhenxing,et al. An electronic synapse based on tantalum oxide material. 2015-01-01. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论