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	NANO-OPTOMECHANICAL STATIC NDOM ACCESS MEMORY (SRAM)
	Dong, B. ; Cai, H. ; Gu, Y. D. ; Yang, Z. C. ; Jin, Y. F. ; Hao, Y. L. ; Kwong, D. L. ; Liu, A. Q.
	2015
英文摘要	This paper reports an on chip nano-optomechanical SRAM, which is integrated with light modulation system on a single silicon chip. In particular, a doubly-clamped silicon beam shows bistability due to the non-linear optical gradient force generated from a ring resonator. The memory states are assigned with two stable deformation positions, which can be switched by modulating the control light's power with the integrated optical modulator. The optical SRAM has write/read time around 120 ns, which is much faster as compared with traditional MEMS memory. Meanwhile, the write and read processes can happen concurrently without interference, which further reduces the time as compared with conventional electrical enabled SRAM.; CPCI-S(ISTP); eaqliu@ntu.edu.sg; 49-52
语种	英语
出处	2015 28TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2015)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/446360]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Dong, B.,Cai, H.,Gu, Y. D.,et al. NANO-OPTOMECHANICAL STATIC NDOM ACCESS MEMORY (SRAM). 2015-01-01.

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