Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by   Cosputtering Technique

doi:10.1109/TED.2015.2513421

CORC > 北京大学 > 信息科学技术学院

	Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique
	Xu, Xin ; Zhang, Letao ; Shao, Yang ; Chen, Zheyuan ; Le, Yong ; Zhang, Shengdong
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2016
关键词	All by indium tin oxide (ITO) amorphous ITO (a-ITO) cosputtering thin-film transistors (TFTs) TRANSPARENT
DOI	10.1109/TED.2015.2513421
英文摘要	Amorphous indium tin oxide (a-ITO) thin-film transistors (TFTs) were fabricated with the channel layer deposited by the cosputtering of In2O3 and SnO2 ceramic targets. It is shown that the cosputter-deposited ITO film for the channel layer well keeps in the amorphous structure even after being annealed at 300 degrees if the sputtering powers of the two targets are properly selected. The fabricated a-ITO TFTs in the cosputtering technique show a high device performance, including a field-effect mobility of 25.9 cm(2)V(-1)s(-1), a subthreshold swing of 0.33 V/decade, an ON/OFF-current ratio of >1 x 10(9), and a desirable threshold voltage variation range. In addition, an acceptable characteristic stability under electrical stress is also observed in the passivated and annealed a-ITO TFTs.; Shenzhen Thin Film Transistor and Advanced Display Laboratory through the National Natural Science Foundation of China [61574003]; Shenzhen Municipal Scientific Program [JCYJ20140417144423195]; SCI(E); EI; ARTICLE; xuxin_098@163.com; zhangletao1986@163.com; 798068288@qq.com; 707495404@qq.com; 1053806388@qq.com; zhangsd@pku.edu.cn; 3; 1072-1077; 63
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/437591]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Xin,Zhang, Letao,Shao, Yang,et al. Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016.
APA	Xu, Xin,Zhang, Letao,Shao, Yang,Chen, Zheyuan,Le, Yong,&Zhang, Shengdong.(2016).Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique.IEEE TRANSACTIONS ON ELECTRON DEVICES.
MLA	Xu, Xin,et al."Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique".IEEE TRANSACTIONS ON ELECTRON DEVICES (2016).