Sub-10 nm low current resistive switching behavior in hafnium oxide   stack

doi:10.1063/1.4944841

CORC > 北京大学 > 信息科学技术学院

	Sub-10 nm low current resistive switching behavior in hafnium oxide stack
	Hou, Y. ; Celano, U. ; Goux, L. ; Liu, L. ; Fantini, A. ; Degraeve, R. ; Youssef, A. ; Xu, Z. ; Cheng, Y. ; Kang, J. ; Jurczak, M. ; Vandervorst, W.
刊名	APPLIED PHYSICS LETTERS
	2016
关键词	TIO2 THIN-FILMS OF-VIEW DEVICE MEMORY RERAM RRAM
DOI	10.1063/1.4944841
英文摘要	In this letter, a tip-induced cell relying on the conductive atomic force microscope is proposed. It is verified as a referable replica of an integrated resistive random access memory (RRAM) device. On the basis of this cell, the functionality of sub-10 nm resistive switching is confirmed in hafnium oxide stack. Moreover, the low current switching behavior in the sub-10 nm dimension is found to be more pronounced than that of a 50 x 50 nm(2) device. It shows better ON/OFF ratio and low leakage current. The enhanced memory performance is ascribed to a change in the shape of the conductive filament as the device dimensions are reduced to sub-10 nm. Therefore, device downscaling provides a promising approach for the resistance optimization that benefits the RRAM array design. (C) 2016 AIP Publishing LLC.; National Natural Science Foundation of China [61376084, 61421005, 61334007]; National Science and Technology Major Project of China [2011ZX02708]; IMEC's Industrial Affiliation Program on RRAM; China Scholarship Council (CSC); SCI(E); EI; ARTICLE; houyi@pku.edu.cn; lfliu@pku.edu.cn; 12; 108
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/437533]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Hou, Y.,Celano, U.,Goux, L.,et al. Sub-10 nm low current resistive switching behavior in hafnium oxide stack[J]. APPLIED PHYSICS LETTERS,2016.
APA	Hou, Y..,Celano, U..,Goux, L..,Liu, L..,Fantini, A..,...&Vandervorst, W..(2016).Sub-10 nm low current resistive switching behavior in hafnium oxide stack.APPLIED PHYSICS LETTERS.
MLA	Hou, Y.,et al."Sub-10 nm low current resistive switching behavior in hafnium oxide stack".APPLIED PHYSICS LETTERS (2016).