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	N+/P shallow junction with high dopant activation and low contact resistivity fabricated by solid phase epitaxy method for Ge technology
	Liu, Pengqiang ; Li, Ming ; An, Xia ; Lin, Meng ; Zhao, Yang ; Zhang, Bingxin ; Xia, Xuyuan ; Huang, Ru
	2015
英文摘要	In this paper, solid phase epitaxy (SPE) process is proposed to improve phosphorous activation and hence reduce the contact resistivity of n+/p junction for Ge n-MOS technology. Over 1×1020cm-3electrical concentration and about 1.75×10-6ohm·cm2contact resistivity have been achieved at P+implantation of 10keV and 5×1014cm-2and annealing condition of 600oC, 10seconds. The fabricated N+/P diode shows 2 times higher forward current and well controlled leakage. ? 2015 JSAP.; EI
语种	英语
出处	Silicon Nanoelectronics Workshop, SNW 2015
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/436629]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Pengqiang,Li, Ming,An, Xia,et al. N+/P shallow junction with high dopant activation and low contact resistivity fabricated by solid phase epitaxy method for Ge technology. 2015-01-01.

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