CORC  > 北京大学  > 信息科学技术学院
Fabrication of 1.5mm thickness silicon pin fast neutron detector with guard ring structure
Zhang, Zhao ; Yu, Min ; Zhu, Zhiyuan ; Wang, Hao ; Huang, Yahuan ; Jin, Yufeng
2016
英文摘要A novel silicon PIN diode with guard ring structure on top of the device for fast neutron dose measurement is presented. The device is designed to include p+ and n+ square contacts on each side of the high resistivity silicon, and a p+ ring surrounding the square p+ region on front side of the device. The sensitivity of the PIN diodes to Am-Be isotropic fast neutron radiation source, whose energy is 4.2MeV, is measured. The experimental results show that the diodes with guard ring achieve 15% higher sensitivity when forward biased. ? 2016 IEEE.; EI
语种英语
出处China Semiconductor Technology International Conference, CSTIC 2016
DOI标识10.1109/CSTIC.2016.7463909
内容类型其他
源URL[http://ir.pku.edu.cn/handle/20.500.11897/436189]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Zhang, Zhao,Yu, Min,Zhu, Zhiyuan,et al. Fabrication of 1.5mm thickness silicon pin fast neutron detector with guard ring structure. 2016-01-01.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace