Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates   without Foreign Catalysts

doi:10.1021/acs.nanolett.5b03587

CORC > 北京大学 > 信息科学技术学院

	Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts
	Du, Wenna ; Yang, Xiaoguang ; Pan, Huayong ; Ji, Xianghai ; Ji, Haiming ; Luo, Shuai ; Zhang, Xingwang ; Wang, Zhanguo ; Yang, Tao
刊名	NANO LETTERS
	2016
关键词	Planar nanowire InAsSb growth direction HRTEM CAFM INDIUM-PHOSPHIDE NANOWIRES III-V NANOWIRES BUILDING-BLOCKS GAAS NANOWIRES GUIDED GROWTH SEEDED GROWTH DEFECT-FREE VLS GROWTH SILICON TRANSISTORS
DOI	10.1021/acs.nanolett.5b03587
英文摘要	We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed (110) directions on an [100]-oriented substrate, two (100) directions plus four (111) directions on an [110]-oriented substrate, and six equivalent (112) directions on an [111]-oriented substrate, which correspond to the projections of (111) family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs, experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.; MOST of China [2012CB932701]; National Natural Science Foundation of China [91433206, 61204076]; Chinese Academy of Sciences [XDA04020411]; SCI(E); EI; PubMed; ARTICLE; tyang@semi.ac.cn; 2; 877-882; 16
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/435321]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Du, Wenna,Yang, Xiaoguang,Pan, Huayong,et al. Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts[J]. NANO LETTERS,2016.
APA	Du, Wenna.,Yang, Xiaoguang.,Pan, Huayong.,Ji, Xianghai.,Ji, Haiming.,...&Yang, Tao.(2016).Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts.NANO LETTERS.
MLA	Du, Wenna,et al."Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts".NANO LETTERS (2016).