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	Assessment of hole mobility in strained InSb, GaSb and InGaSb based ultra-thin body pMOSFETs with different surface orientations
	Chang, Pengying ; Liu, Xiaoyan ; Du, Gang ; Zhang, Xing
	2015
英文摘要	This work presents a systematic assessment of hole mobility in InSb, GaSb and InGaSb based ultra-thin body (UTB) double-gate pMOSFETs employing a self-consistent method based on 8??8 k ?? p Schr?dinger and Poisson equations and including important scattering mechanisms. Physical models are calibrated against experiments. The effect of body thickness, surface/channel orientation, biaxial and uniaxial strain, and heterostructure design on hole mobility in III-V materials has been systematically investigated in order to help in providing useful guidelines. ? 2014 IEEE.; EI; February; 7.7.1-7.7.4; 2015-February
语种	英语
出处	2014 60th IEEE International Electron Devices Meeting, IEDM 2014
DOI标识	10.1109/IEDM.2014.7047007
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/423684]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chang, Pengying,Liu, Xiaoyan,Du, Gang,et al. Assessment of hole mobility in strained InSb, GaSb and InGaSb based ultra-thin body pMOSFETs with different surface orientations. 2015-01-01.

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