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	Impact of Temporal Transistor Variations on Circuit Reliability
	Wang, Runsheng ; Cao, Yu
	2015
关键词	circuit reliability temporal variation bias temperature instability (BTI) random telegraph noise (RTN)
英文摘要	With the ever-increasing importance of temporal transistor variations during circuit run time and aging, this paper focuses on impacts of the two major temporal effects: the Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN), illustrating their scaling trend, challenges, and potential solutions for future design robustness.; EI; CPCI-S(ISTP); r.wang@pku.edu.cn; yu.cao@asu.edu; 2453-2456; 2015-July
语种	中文
出处	2015 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)
DOI标识	10.1109/ISCAS.2015.7169181
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/423443]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Runsheng,Cao, Yu. Impact of Temporal Transistor Variations on Circuit Reliability. 2015-01-01.

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