Impact of Temporal Transistor Variations on Circuit Reliability | |
Wang, Runsheng ; Cao, Yu | |
2015 | |
关键词 | circuit reliability temporal variation bias temperature instability (BTI) random telegraph noise (RTN) |
英文摘要 | With the ever-increasing importance of temporal transistor variations during circuit run time and aging, this paper focuses on impacts of the two major temporal effects: the Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN), illustrating their scaling trend, challenges, and potential solutions for future design robustness.; EI; CPCI-S(ISTP); r.wang@pku.edu.cn; yu.cao@asu.edu; 2453-2456; 2015-July |
语种 | 中文 |
出处 | 2015 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) |
DOI标识 | 10.1109/ISCAS.2015.7169181 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/423443] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Wang, Runsheng,Cao, Yu. Impact of Temporal Transistor Variations on Circuit Reliability. 2015-01-01. |
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