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	Design guidelines for 3D RRAM cross-point architecture
	Yu, Shimeng ; Deng, Yexin ; Gao, Bin ; Huang, Peng ; Chen, Bing ; Liu, Xiaoyan ; Kang, Jinfeng ; Chen, Hong-Yu ; Jiang, Zizhen ; Wong, H.-S. Philip
	2014
英文摘要	Design guidelines were proposed to evaluate and optimize the 3D RRAM cross-point architecture by a full-size 3D circuit simulation in SPICE. The performance metrics that were evaluated include the write/read margin, access latency, energy consumption per programming, and the density per bit. Different 3D cross-point architecture including the horizontally stacked or the vertically stacked structure were compared in terms of these metrics, revealing the advantages of the vertical RRAM structure. Then the scaling trend of the vertical RRAM based 3D array with respect to the scaling of lateral feature size, vertical electrode thickness and vertical isolation layer thickness were evaluated. The design parameters that affect the scaling trend include the metal interconnect resistance, RRAM on-state cell resistance (or the nonlinearity of the I-V). The design trade-offs are discussed considering those parameters constraints. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ISCAS.2014.6865155
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/412594]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yu, Shimeng,Deng, Yexin,Gao, Bin,et al. Design guidelines for 3D RRAM cross-point architecture. 2014-01-01.

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