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	Low frequency 1/f noise in graphene FETs
	Li, Tiaoyang ; Gao, Qingguo ; Wei, Zijun ; Li, Xuefei ; Fu, Yunyi ; Wu, Yanqing
	2014
英文摘要	The exceptional properties of graphene create opportunities for application in electronic devices, such as sensor and radio frequency (RF) circuits. In these applications, low frequency noise is a key figure of merit and sometimes a limiting factor in their performance. In this study, we investigate low frequency 1/f noise of top-gate graphene field effect transistors (GFETs) from room temperature down to low temperature. We systematically study the 1/f noise properties and their dependence on carrier density, temperature and channel length. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2014.7021167
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/412563]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Tiaoyang,Gao, Qingguo,Wei, Zijun,et al. Low frequency 1/f noise in graphene FETs. 2014-01-01.

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